In an unbiased 
junction, holes diffuse from the 
-region to 
-region because
A
free electrons in the 
-region attract them
-region attract them B
they move across the junction by the potential difference
C
hole concentration in p-region is more as compared to 
-region
-region D
All of the above
Text Solution
Verified by ExpertsThe correct answer is:
C
The diffusion of charge carriers across a junction takes place from the region of higher concentration to the region of lower concentration. In this case, the p-region has a greater concentration of holes than the n-region. Hence, in an unbiased p-n junction, holes diffuse from the p-region to the n-region.
Prepare Smarter with CGP Edu
Get practice questions, solutions, and test series in one place.
Write a Review
Share your experience with this question and solution.
Commentary
Send your comment, doubt, correction, or feedback to admin.
Similar Questions
Explore conceptually related problems
To obtain -type semiconductor, we need to dope pure Si with
If and represent the number of free electrons density and holes density respectively in a semicon…
An -type and -type silicon can be obtained by doping pure silicon with
Let and be the number of holes and conduction electrons respectively in a semiconductor, then
In -type semiconductor, the majority and minority charge carriers are respectively
The electrical resistance of which of the following decreases with rise in temperature?